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Progress towards intersubband quantum-box lasers for highly efficient continuous wave operation in the mid-infrared

机译:用于中红外高效连续波操作的子带间量子盒激光器的研究进展

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摘要

Intersubband Quantum-Box (IQB) lasers; that is, devices consisting of 2-D arrays of ministacks (i.e., 2-4 stages) intersubband QB emitters are proposed, as an alternative to 30-stage quantum-cascade (QC) devices, as sources for efficient room-temperature (RT) emission in the mid-infrared (4-6 µm) wavelength range. Preliminary results include: 1) the design of devices for operation with 50% wallplug efficiency at RT; 2) realization of a novel type of QC device: the deep-well (DW) QC laser, that has demonstrated at lambda =4.7µm low temperature sensitivity of the threshold current, a clear indication of suppressed carrier leakage; 3) the formation of 2-D arrays at nanopoles by employing nanopatterning and dry etching; 4) the formation of 40nm-diameter, one-stage IQB structures on 100nm centers by preferential regrowth via metal-organic vapor phase epitaxy (MOVPE).
机译:子带间量子盒(IQB)激光器;也就是说,作为30级量子级联(QC)器件的替代方案,提出了由微型堆叠的二维阵列(即2-4级)子带间QB发射器组成的器件,作为有效室温(RT)的源)在中红外(4-6 µm)波长范围内发射。初步结果包括:1)设计在RT下具有50%壁挂效率的运行设备; 2)实现一种新型的QC器件:深阱(DW)QC激光器,该激光器在λ=4.7μm时具有阈值电流的低温敏感性,清楚地表明了载流子泄漏得到抑制。 3)通过纳米图案化和干法刻蚀在纳米极处形成二维阵列。 4)通过有机金属气相外延(MOVPE)优先生长,在100nm中心形成直径40nm的一级IQB结构。

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